[1] Takamiya H, Miura M, Usami N, et al. Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayer[J]. Thin Solid Film, 2000, 369(1): 84-87.[2] Shchukin V A, Bimberg D. Strain-driven self-organization of nanostructures on semiconductor surfaces[J]. J Appl. Phys, 1998, 67(6):687–700. [3] Pearson G S, Faux D A. Analytical solutions for strain in pyramidal quantum dots [J]. J Appl. Phys, 2000, 88(2):730-736.[4] Benabbas T, Androussi Y and Lefebvre A. A finite-element study of strain fields in vertically aligned InAs islands in GaAs[J]. J Appl. Phys, 1999, 86(4): 1945–1950.[5] Kikuchi Y, Sugii H,Shintani K. Strain profiles in pyramidal quantum dots by means of atomistic simulation[J]. J Appl. Phys, 2001, 89(2):1191–1196.[6] J. R. Downes, D. A. Faux, E. P. O’Reilly. A simple method for calculating strain distributions in quantum dot structures [J]. J Appl. Phys, 1997, 81(10):6700 - 6702.[7] Andreev A D, Downes J R, O’Reilly E P. Strain distributions in quantum dots of arbitrary shape[J]. J Appl Phys, 1999 86(1):297-305.[8] Yang Hongbo, Yu Zhong yuan, Liu Yu min, et al. Investigation on elastic strain energy in quantum dots [J]. Journal of Synthetic Crystals, 2004, 33(4):531-534.[9] Guo Fen-zhuo, Wen Qiao-yan1 , Zhu Fu-chen,Quantum key distribution based on entangled states and non-orthogonal states[J].The Journal of China Universities of Posts and Telecommunications, 2004, 11(4): 33-36. [10] 吴磊, 郑远, 齐江, 等. 有限元法分析非对称光纤耦合器波导[J]. 北京邮电大学学报,2002,25(1):64-78.Wu Lei, Zheng Yuan, Qi Jiang,et al. Finite element analysis of optical waveguides in asymmetry fiber couplers [J].The Journal of China Universities of Posts and Telecommunications, 2002,25(1):64-78 |